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FRIGERI, CESARE

FRIGERI, CESARE  

Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM  

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Risultati 1 - 20 di 99 (tempo di esecuzione: 0.057 secondi).
Titolo Data di pubblicazione Autore(i) File
A new semimagnetic compound: Cd1-xFexIn2S4 single crystal grown by CVT 1-gen-2011 Attolini, Giovanni ; Frigeri, Cesare ; Solzi, Massimo ; Delgado, G. E. ; Sagredo, Vicente
A novel mechanism to explain wafer bending during the growth of SiC films on Si 1-gen-2008 Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals 1-gen-2010 González, M A; Martìnez, O; Jimenez, J; Frigeri, C; Weyher, J L
A study of dislocations, precipitates and deep level EL2 in LEC GaAs grown under Ga-rich conditions 1-gen-1993 Frigeri, C; L Weyher, J; Ch Alt, H
AFM and TEM study of hydrogenated sputtered Si/Ge multilayers 1-gen-2009 Frigeri C.; Nasi L.; Serényi M.; Csik A.; Erdélyi Z.; Beke D. L.
Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods 1-gen-2002 Frigeri C.; Ma M.; Irisawa T.; Ogawa T.
Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals 1-gen-1997 Frigeri, C; Jiménez, J; Martín, P; L Weyher, J
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering 1-gen-2007 Frigeri C.; Gombia E.; Motta A.
Bulk micro defects behaviour in not-intentionally contaminated epi Si submitted to relaxation and segregation gettering 1-gen-2007 C. Frigeri; E. Gombia;A. Motta
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity 1-gen-2008 Frigeri, C; Attolini, G; Bosi, M; Watts, B E
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications 1-gen-2008 Ferrari, C; Bosi, M; Attolini, G; Frigeri, C; Gombia, E; Pelosi, C; Arumainathan, S; Musayeva, N
Characterization of LEC GaAs by electron beam induced current analysis 1-gen-1993 C. Frigeri
Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods 1-gen-2011 Frigeri, Cesare ; Shakhmin, Alexey Aleksandrovich ; Vinokurov, Dmitry Anatolievich ; Zamoryanskaya, Maria Vladimirovna
CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD 1-gen-2011 Frigeri, Cesare; Shakhmin Alexey, Aleksandrovich; Vinokurov Dmitry, Anatolievich; Zamoryanskaya Maria, Vladimirovna
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions 1-gen-2007 Frigeri, C; Pelosi, C; Germini, F; Attolini, G; Bosi, M
Combined used of EBIC and DSL photoetching for the quantitative assessment of defect properties in LEC GaAs 1-gen-1990 Frigeri, C; Weyher, Jl
Comparative analysis of amorphous silicon and silicon nitride multilayer by spectroscopic ellipsometry and transmission electron microscopy 1-gen-2007 Serényi M.; Lohner T.; PetriK P.; Frigeri C.
Competition between internal and heavy doping gettering options in epi-silicon 1-gen-2006 Frigeri C.; Gombia E.; Motta A.
Correlations between sintering and agglomeration phenomena of UO2 powders 1-gen-1978 Berti, R; Frigeri, C; Gondi, P; Patuelli, C
Cross-sectional TEM study of subsurface damage in SPDT machining of germanium optics 1-gen-2018 Korytar D.; Zaprazny Z.; Ferrari C.; Frigeri C.; Jergel M.; Matko I.; Keckes J.