D'ARRIGO, GIUSEPPE ALESSIO MARIA
D'ARRIGO, GIUSEPPE ALESSIO MARIA
Istituto per la Microelettronica e Microsistemi - IMM
3C-SiC film growth on Si substrates
2011 Severino A; Locke C; Anzalone R; Camarda M; Piluso; N La Magna A; Saddow; S E; Abbondanza G; D'Arrigo G; La Via; F
3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP)
2010 D'Arrigo, G; Severino, A; Milazzo, G; Bongiorno, C; Piluso, N; Abbondanza, G; Mauceri, M; Condorelli, G; La Via, F
3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor
2009 Anzalone, R; Severino, A; D'Arrigo, G; Bongiorno, C; Fiorenza, P; Foti, G; Condorelli, G; Mauceri, M; Abbondanza, G; La Via, F
4H-SiC Detector in High Photons and Ions Irradiation Regime
2018 Sciuto, A.; D'Arrigo, G.; Di Franco, S.; Mazzillo, M.; Franzo, G.; Torrisi, L.; Calcagno, L.
4H-SiC p-n Junction-Based Near IR Photon Source
2021 Sciuto, Antonella; Calcagno, Lucia; Mazzillo, Massimo; Mello, Domenico; Barbarino Pietro, Paolo; Zimbone, Massimo; D'Arrigo, GIUSEPPE ALESSIO MARIA
A new position sensitive anode for plasmas diagnostic
2013 Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F
advanced micromachining processes for micro-opto-electromechanical components
2002 G D'Arrigo; S Coffa; C. Spinella
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application
2011 Anzalone R; D'Arrigo G; Camarda M; Locke C; Saddow S E; La Via F
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application
2011 R. Anzalone; G. D'Arrigo; M. Camarda; C. Locke; S. Saddow; f. la via
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
2011 Anzalone, R; Camarda, M; D'Arrigo, G; Piluso, N; Severino, A; Canino, A; La Magna, A; Via, La; F,
Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application
2011 Anzalone, R; Camarda, M; D'Arrigo, G; Locke, C; Canino, A; Piluso, N; Severino, A; La Magna, A; Saddow, ; S, E; Via, La; F,
ag-assisted chemical etching of (100) and (111) n-Type silicon Substrate by varing the amount of deposited metal
2012 G Milazzo, R; D'Arrigo, G; Spinella, C; G Grimaldi, M; Rimini, E
Ag-Assisted Chemical Etching of (100) and (111) n-Type Silicon Substrates by Varying the Amount of Deposited Metal
2012 Milazzo, Rg; D'Arrigo, G; Spinella, C; Grimaldi, Mg; Rimini, E
Characterization and patterning of bacteriorhodopsin films on Si-based materials
2003 Libertino, S; Fichera, M; D'Arrigo, G; La Mantia, A; Ricceri, D
Characterization of embedded rhomboidal microchannels formation on silicon (100) surface
2004 D'Arrigo, G; Spinella, C; Rimini, E; Rubino, L; Lorenti, S
Coalescence of silver clusters by immersion in diluted HF solution
2015 Milazzo, Rg; Mio, Am; D'Arrigo, G; Grimaldi, Mg; Spinella, C; Rimini, E
Competitive delineation of n- and p-doped Si by selective electrochemical etch
2001 D'Arrigo G; Spinella C
Computational analysis of etched profile evolution for the derivation of 2D dopant density maps in silicon
2003 La Magna, A; D'Arrigo, G; Garozzo, G; Spinella, C
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5
2020 D'Arrigo, G; Mio, A M; Boschker, J E; Meli, A; Cecchi, S; Zallo, E; Sciuto, A; Buscema, M; Bruno, E; Calarco, R; Rimini, E
crystallization of nanometer ge2sb2te5 amorphous region embedded in the hexagonal closed packed struturtes
2012 M Mio, A; D'Arrigo, G; Carria, E; Bongiorno, C; Rossini, S; Spinella, C; G Grimaldi, M; Rimini, E
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
3C-SiC film growth on Si substrates | 1-gen-2011 | Severino A; Locke C; Anzalone R; Camarda M; Piluso; N La Magna A; Saddow; S E; Abbondanza G; D'Arrigo G; La Via; F | |
3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP) | 1-gen-2010 | D'Arrigo, G; Severino, A; Milazzo, G; Bongiorno, C; Piluso, N; Abbondanza, G; Mauceri, M; Condorelli, G; La Via, F | |
3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor | 1-gen-2009 | Anzalone, R; Severino, A; D'Arrigo, G; Bongiorno, C; Fiorenza, P; Foti, G; Condorelli, G; Mauceri, M; Abbondanza, G; La Via, F | |
4H-SiC Detector in High Photons and Ions Irradiation Regime | 1-gen-2018 | Sciuto, A.; D'Arrigo, G.; Di Franco, S.; Mazzillo, M.; Franzo, G.; Torrisi, L.; Calcagno, L. | |
4H-SiC p-n Junction-Based Near IR Photon Source | 1-gen-2021 | Sciuto, Antonella; Calcagno, Lucia; Mazzillo, Massimo; Mello, Domenico; Barbarino Pietro, Paolo; Zimbone, Massimo; D'Arrigo, GIUSEPPE ALESSIO MARIA | |
A new position sensitive anode for plasmas diagnostic | 1-gen-2013 | Grasso, R; Tudisco, S; Anzalone, A; Musumeci, F; Scordino, A; Spitaleri, A; Anzalone, R; D'Arrigo, G; La Via, F | |
advanced micromachining processes for micro-opto-electromechanical components | 1-gen-2002 | G D'Arrigo; S Coffa; C. Spinella | |
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application | 1-gen-2011 | Anzalone R; D'Arrigo G; Camarda M; Locke C; Saddow S E; La Via F | |
Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application | 1-gen-2011 | R. Anzalone; G. D'Arrigo; M. Camarda; C. Locke; S. Saddow; f. la via | |
Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application | 1-gen-2011 | Anzalone, R; Camarda, M; D'Arrigo, G; Piluso, N; Severino, A; Canino, A; La Magna, A; Via, La; F, | |
Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application | 1-gen-2011 | Anzalone, R; Camarda, M; D'Arrigo, G; Locke, C; Canino, A; Piluso, N; Severino, A; La Magna, A; Saddow, ; S, E; Via, La; F, | |
ag-assisted chemical etching of (100) and (111) n-Type silicon Substrate by varing the amount of deposited metal | 1-gen-2012 | G Milazzo, R; D'Arrigo, G; Spinella, C; G Grimaldi, M; Rimini, E | |
Ag-Assisted Chemical Etching of (100) and (111) n-Type Silicon Substrates by Varying the Amount of Deposited Metal | 1-gen-2012 | Milazzo, Rg; D'Arrigo, G; Spinella, C; Grimaldi, Mg; Rimini, E | |
Characterization and patterning of bacteriorhodopsin films on Si-based materials | 1-gen-2003 | Libertino, S; Fichera, M; D'Arrigo, G; La Mantia, A; Ricceri, D | |
Characterization of embedded rhomboidal microchannels formation on silicon (100) surface | 1-gen-2004 | D'Arrigo, G; Spinella, C; Rimini, E; Rubino, L; Lorenti, S | |
Coalescence of silver clusters by immersion in diluted HF solution | 1-gen-2015 | Milazzo, Rg; Mio, Am; D'Arrigo, G; Grimaldi, Mg; Spinella, C; Rimini, E | |
Competitive delineation of n- and p-doped Si by selective electrochemical etch | 1-gen-2001 | D'Arrigo G; Spinella C | |
Computational analysis of etched profile evolution for the derivation of 2D dopant density maps in silicon | 1-gen-2003 | La Magna, A; D'Arrigo, G; Garozzo, G; Spinella, C | |
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5 | 1-gen-2020 | D'Arrigo, G; Mio, A M; Boschker, J E; Meli, A; Cecchi, S; Zallo, E; Sciuto, A; Buscema, M; Bruno, E; Calarco, R; Rimini, E | |
crystallization of nanometer ge2sb2te5 amorphous region embedded in the hexagonal closed packed struturtes | 1-gen-2012 | M Mio, A; D'Arrigo, G; Carria, E; Bongiorno, C; Rossini, S; Spinella, C; G Grimaldi, M; Rimini, E |