NIPOTI, ROBERTA
NIPOTI, ROBERTA
Istituto per la Microelettronica e Microsistemi - IMM
Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
2024 Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta
Investigating Mesa Structure Impact on C-V Measurements
2024 Sozzi, Giovanna; Chiorboli, Giovanni; Perini, Lorenzo; Nipoti, Roberta
The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes
2024 Alfieri, G.; Bolat, S.; Nipoti, R.
Native Silicon Oxide Properties Determined by Doping
2023 Michele Della Ciana; Alessandro Kovtun; Caterina Summonte; Andrea Candini; Daniela Cavalcoli;Denis Gentili; Roberta Nipoti;Cristiano Albonetti
Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters
2022 Fantini G.; Armatol A.; Armengaud E.; Armstrong W.; Augier C.; Avignone F.T.; Azzolini O.; Barabash A.; Bari G.; Barresi A.; Baudin D.; Bellini F.; Benato G.; Beretta M.; Berge L.; Biassoni M.; Billard J.; Boldrini V.; Branca A.; Brofferio C.; Bucci C.; Camilleri J.; Capelli S.; Cappelli L.; Cardani L.; Carniti P.; Casali N.; Cazes A.; Celi E.; Chang C.; Chapellier M.; Charrier A.; Chiesa D.; Clemenza M.; Colantoni I.; Collamati F.; Copello S.; Cova F.; Cremonesi O.; Creswick R.J.; Cruciani A.; D'Addabbo A.; D'Imperio G.; Dafinei I.; Danevich F.A.; de Combarieu M.; De Jesus M.; de Marcillac P.; Dell'Oro S.; Domizio S.D.; Dompe V.; Drobizhev A.; Dumoulin L.; Fasoli M.; Faverzani M.; Ferri E.; Ferri F.; Ferroni F.; FigueroaFeliciano E.; Formaggio J.; Franceschi A.; Fu C.; Fu S.; Fujikawa B.K.; Gascon J.; Giachero A.; Gironi L.; Giuliani A.; Gorla P.; Gotti C.; Gras P.; Gros M.; Gutierrez T.D.; Han K.; Hansen E.V.; Heeger K.M.; Helis D.L.; Huang H.Z.; Huang R.G.; Imbert L.; Johnston J.; Juillard A.; Karapetrov G.; Keppel G.; Khalife H.; Kobychev V.V.; Kolomensky Y.G.; Konovalov S.; Liu Y.; Loaiza P.; Ma L.; Madhukuttan M.; Mancarella F.; Mariam R.; Marini L.; Marnieros S.; Martinez M.; Maruyama R.H.; Mauri B.; Mayer D.; Mei Y.; Milana S.; Misiak D.; Napolitano T.; Nastasi M.; Navick X.F.; Nikkel J.; Nipoti R.; Nisi S.; Nones C.; Norman E.B.; Novosad V.; Nutini I.; O'Donnell T.; Olivieri E.; Oriol C.; Ouellet J.L.; Pagan S.; Pagliarone C.; Pagnanini L.; Pari P.; Pattavina L.; Paul B.; Pavan M.; Peng H.; Pessina G.; Pettinacci V.; Pira C.; Pirro S.; Poda D.V.; Polakovic T.; Polischuk O.G.; Pozzi S.; Previtali E.; Puiu A.; Ressa A.; Rizzoli R.; Rosenfeld C.; Rusconi C.; Sanglard V.; Scarpaci J.; Schmidt B.; Sharma V.; Shlegel V.; Singh V.; Sisti M.; Speller D.; Surukuchi P.T.; Taffarello L.; Tellier O.; Tomei C.; Tretyak V.I.; Tsymbaliuk A.; Vedda A.; Velazquez M.; Vetter K.J.; Wagaarachchi S.L.; Wang G.; Wang L.; Welliver B.; Wilson J.; Wilson K.; Winslow L.A.; Xue M.; Yan L.; Yang J.; Yefremenko V.; Yumatov V.; Zarytskyy M.M.; Zhang J.; Zolotarova A.; Zucchelli S.
Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC
2022 Alfieri, G; Wirths, S; Buca, D; Nipoti, R
OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
2021 Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni
4H-SiC surface morphology after Al ion implantation and annealing with C-cap
2020 CANINO; MARICA;FEDELI; PAOLO;ALBONETTI; CRISTIANO;NIPOTI; ROBERTA
1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si
2019 Nipoti, Roberta; Canino, Mariaconcetta; Zielinski, Marcin; Torregrosa, Frank; Carnera, Alberto
The role of defects on forward current in 4H-SiC p-i-n diodes
2019 Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta
3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE)
2018 La Via, F; Roccaforte, F; La Magna, A; Nipoti, R; Mancarella, F; Wellman, P; Crippa, D; Mauceri, M; Ward, P; Miglio, L; Zielinski, M; Schoner, A; Nejim, A; Vivani, L; Yakimova, R; Syvajarvi, M; Grosset, G; Torregrossa, F; Jennings, M; Mawby, P; Anzalone, R; Coffa, S; Nagasawa, H
Defects related to electrical doping of 4H-SiC by ion implantation
2018 Nipoti, Roberta; Ayedh Hussein, M; Svensson Bengt, Gunnar
Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p(+)-i-n Diode With Al+ Ion-Implanted Emitters
2018 Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Menozzi, Roberto
OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area
2017 Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta
Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC
2017 Parisini, Antonella; Parisini, Andrea; Nipoti, Roberta
Surface roughness in Al-implanted 4H-SiC substrates for different Al concentrations and after 1950°C post implantation annealing
2017 Fedeli, P; Albonetti, C; Nipoti, R
Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
2017 Ayedh, H. M.; Nipoti, R.; Hallen, A.; Svensson, B. G.
1950 °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time
2016 Fedeli, P; Gorni, M; Carnera, A; Parisini, A; Alfieri, G; Grossner, U; Nipoti, R
Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing
2016 Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto
Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
2015 Ayedh, H M; Nipoti, R; Hallen, A; Svensson, B G
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law | 1-gen-2024 | Sozzi, Giovanna; Sapienza, Sergio; Chiorboli, Giovanni; Vines, Lasse; Hallén, Anders; Nipoti, Roberta | |
| Investigating Mesa Structure Impact on C-V Measurements | 1-gen-2024 | Sozzi, Giovanna; Chiorboli, Giovanni; Perini, Lorenzo; Nipoti, Roberta | |
| The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes | 1-gen-2024 | Alfieri, G.; Bolat, S.; Nipoti, R. | |
| Native Silicon Oxide Properties Determined by Doping | 1-gen-2023 | Michele Della Ciana; Alessandro Kovtun; Caterina Summonte; Andrea Candini; Daniela Cavalcoli;Denis Gentili; Roberta Nipoti;Cristiano Albonetti | |
| Machine Learning Techniques for Pile-Up Rejection in Cryogenic Calorimeters | 1-gen-2022 | Fantini G.; Armatol A.; Armengaud E.; Armstrong W.; Augier C.; Avignone F.T.; Azzolini O.; Barabash A.; Bari G.; Barresi A.; Baudin D.; Bellini F.; Benato G.; Beretta M.; Berge L.; Biassoni M.; Billard J.; Boldrini V.; Branca A.; Brofferio C.; Bucci C.; Camilleri J.; Capelli S.; Cappelli L.; Cardani L.; Carniti P.; Casali N.; Cazes A.; Celi E.; Chang C.; Chapellier M.; Charrier A.; Chiesa D.; Clemenza M.; Colantoni I.; Collamati F.; Copello S.; Cova F.; Cremonesi O.; Creswick R.J.; Cruciani A.; D'Addabbo A.; D'Imperio G.; Dafinei I.; Danevich F.A.; de Combarieu M.; De Jesus M.; de Marcillac P.; Dell'Oro S.; Domizio S.D.; Dompe V.; Drobizhev A.; Dumoulin L.; Fasoli M.; Faverzani M.; Ferri E.; Ferri F.; Ferroni F.; FigueroaFeliciano E.; Formaggio J.; Franceschi A.; Fu C.; Fu S.; Fujikawa B.K.; Gascon J.; Giachero A.; Gironi L.; Giuliani A.; Gorla P.; Gotti C.; Gras P.; Gros M.; Gutierrez T.D.; Han K.; Hansen E.V.; Heeger K.M.; Helis D.L.; Huang H.Z.; Huang R.G.; Imbert L.; Johnston J.; Juillard A.; Karapetrov G.; Keppel G.; Khalife H.; Kobychev V.V.; Kolomensky Y.G.; Konovalov S.; Liu Y.; Loaiza P.; Ma L.; Madhukuttan M.; Mancarella F.; Mariam R.; Marini L.; Marnieros S.; Martinez M.; Maruyama R.H.; Mauri B.; Mayer D.; Mei Y.; Milana S.; Misiak D.; Napolitano T.; Nastasi M.; Navick X.F.; Nikkel J.; Nipoti R.; Nisi S.; Nones C.; Norman E.B.; Novosad V.; Nutini I.; O'Donnell T.; Olivieri E.; Oriol C.; Ouellet J.L.; Pagan S.; Pagliarone C.; Pagnanini L.; Pari P.; Pattavina L.; Paul B.; Pavan M.; Peng H.; Pessina G.; Pettinacci V.; Pira C.; Pirro S.; Poda D.V.; Polakovic T.; Polischuk O.G.; Pozzi S.; Previtali E.; Puiu A.; Ressa A.; Rizzoli R.; Rosenfeld C.; Rusconi C.; Sanglard V.; Scarpaci J.; Schmidt B.; Sharma V.; Shlegel V.; Singh V.; Sisti M.; Speller D.; Surukuchi P.T.; Taffarello L.; Tellier O.; Tomei C.; Tretyak V.I.; Tsymbaliuk A.; Vedda A.; Velazquez M.; Vetter K.J.; Wagaarachchi S.L.; Wang G.; Wang L.; Welliver B.; Wilson J.; Wilson K.; Winslow L.A.; Xue M.; Yan L.; Yang J.; Yefremenko V.; Yumatov V.; Zarytskyy M.M.; Zhang J.; Zolotarova A.; Zucchelli S. | |
| Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC | 1-gen-2022 | Alfieri, G; Wirths, S; Buca, D; Nipoti, R | |
| OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup | 1-gen-2021 | Sozzi, Giovanna; Sapienza, Sergio; Nipoti, Roberta; Chiorboli, Giovanni | |
| 4H-SiC surface morphology after Al ion implantation and annealing with C-cap | 1-gen-2020 | CANINO; MARICA;FEDELI; PAOLO;ALBONETTI; CRISTIANO;NIPOTI; ROBERTA | |
| 1300°C annealing of 1 × 10^20 cm^-3 Al+ ion implanted 3C-SiC/Si | 1-gen-2019 | Nipoti, Roberta; Canino, Mariaconcetta; Zielinski, Marcin; Torregrosa, Frank; Carnera, Alberto | |
| The role of defects on forward current in 4H-SiC p-i-n diodes | 1-gen-2019 | Sozzi, Giovanna; Puzzanghera, Maurizio; Menozzi, Roberto; Nipoti, Roberta | |
| 3C-SiC hetero-epitaxially grown on silicon compliance substrates and new 3C-SiC substrates for sustainable wide-band-gap power devices (CHALLENGE) | 1-gen-2018 | La Via, F; Roccaforte, F; La Magna, A; Nipoti, R; Mancarella, F; Wellman, P; Crippa, D; Mauceri, M; Ward, P; Miglio, L; Zielinski, M; Schoner, A; Nejim, A; Vivani, L; Yakimova, R; Syvajarvi, M; Grosset, G; Torregrossa, F; Jennings, M; Mawby, P; Anzalone, R; Coffa, S; Nagasawa, H | |
| Defects related to electrical doping of 4H-SiC by ion implantation | 1-gen-2018 | Nipoti, Roberta; Ayedh Hussein, M; Svensson Bengt, Gunnar | |
| Perimeter and Area Components in the I-V Curves of 4H-SiC Vertical p(+)-i-n Diode With Al+ Ion-Implanted Emitters | 1-gen-2018 | Nipoti, Roberta; Puzzanghera, Maurizio; Sozzi, Giovanna; Menozzi, Roberto | |
| OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area | 1-gen-2017 | Sozzi, Giovanna; Puzzanghera, Maurizio; Chiorboli, Giovanni; Nipoti, Roberta | |
| Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC | 1-gen-2017 | Parisini, Antonella; Parisini, Andrea; Nipoti, Roberta | |
| Surface roughness in Al-implanted 4H-SiC substrates for different Al concentrations and after 1950°C post implantation annealing | 1-gen-2017 | Fedeli, P; Albonetti, C; Nipoti, R | |
| Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect | 1-gen-2017 | Ayedh, H. M.; Nipoti, R.; Hallen, A.; Svensson, B. G. | |
| 1950 °C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time | 1-gen-2016 | Fedeli, P; Gorni, M; Carnera, A; Parisini, A; Alfieri, G; Grossner, U; Nipoti, R | |
| Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC p-n junctions after 1950°C post implantation annealing | 1-gen-2016 | Nipoti, Roberta; Parisini, Antonella; Sozzi, Giovanna; Puzzanghera, Maurizio; Puzzanghera, Maurizio; Parisini, Andrea; Carnera, Alberto | |
| Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures | 1-gen-2015 | Ayedh, H M; Nipoti, R; Hallen, A; Svensson, B G |