Majority and minority carrier traps in manganese as-implantated and post-implantation annealed 4H-SiC

Ion implantation of amphoteric impurities, like vanadium (V) or manganese (Mn), can beemployed for the formation of resistive layers in 4H-SiC. Such layers can then be used for deviceisolation, in order to reduce the parasitic capacitance. While V implantation can form thermally stableresistive layers, not much is known on Mn implantation. In the present investigation, we electricallycharacterized Mn ion implanted samples by means of capacitance-voltage, deep level transientspectroscopy and current-voltage measurements. Two ion implantation schedules were carried out:single-energy and multiple-energy ions so to have gaussian and box-shaped Mn and related iondamage profiles, respectively. The former with a maximum concentration in the low 10^16 cm^-3 , thelatter with a Mn plateaux of 10^17 cm^- 3 . It is found that several majority carrier traps, in the 0.4-1.7eV range below the conduction band edge, and two minority carrier traps arise after implantation andafter post-implantation annealing in the 1000-1800 °C temperature range. The detected traps, as wellas previous reports in the literature, show that most of them can be associated to intrinsic defects. Boxprofile implanted layers show resistivity values in the 10^6 Ohm.cm after heat treatments of, at least,1600 ° C.