CNR Institutional Research Information System

ALBERTAZZI, EROS

ALBERTAZZI, EROS  

Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna  

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Titolo Data di pubblicazione Autore(i) File
Codice MC-BCA per simulazione 2D impianto ionico in SiC 1-gen-2010 Lulli, Giorgio; Albertazzi, Eros
KING 1-gen-2007 Lulli, G; Albertazzi, E
Defect-induced homogeneous amorphization of silicon: the role of defect structure and population 1-gen-2006 Lulli, G; Albertazzi, E; Balboni, S; Colombo, L
Ab initio structures of AsmV complexes and the simulation of Rutherford backscattering channeling spectra in heavily As-doped crystalline silicon 1-gen-2005 Satta, A; Albertazzi, E; Lulli, G; Colombo, L
Atomistic simulation of ion channeling in heavily doped Si : As 1-gen-2005 Satta A.; Albertazzi E.; Bianconi M.; Lulli G.; Balboni S.; Colombo L.
Channeling characterization of defects in silicon: an atomistic approach 1-gen-2005 Bianconi, M; Albertazzi, E; Balboni, S; Colombo, L; Lulli, G; Satta, A
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra 1-gen-2005 Lulli G.; Albertazzi E.; Bianconi M.; Satta A.; Balboni S.; Colombo L.; Uguzzoni A.
Analysis of ion implanted silicon by RBS-channeling: influence of the damage model 1-gen-2004 Bianconi, M; Albertazzi, E; Balboni, S; Lulli, G
Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters 1-gen-2004 Lulli, G; Albertazzi, E; Bianconi, M; Satta, A; Balboni, S; Colombo, L
Analysis of ion implanted Silicon by RBS-channeling: influence of the damage model. 1-gen-2003 M. Bianconi ; E. Albertazzi; S. Balboni; G. Lulli.
Atomistic model of defects for the simulation of RBS-channeling measurements in ion irradiated silicon 1-gen-2003 Lulli G.; Albertazzi E.; Balboni S.; Bianconi M.
Computer simulation of ion channeling in Si containing structurally relaxed point defects 1-gen-2003 Lulli G.; Albertazzi E.; Bianconi M.; Balboni S.
Ion-channeling analysis of As relocation in heavily doped Si: As irradiated with high-energy ions 1-gen-2003 Lulli, G; Albertazzi, E; Bianconi, M; Ferri, M
Lattice location of As in heavily doped Si:As investigated by atomistic simulation of RBS-c spectra 1-gen-2003 Satta, A; Albertazzi, E; Balboni, S; Bianconi, M; Colombo, L; Lulli, G
Atomistic modeling of ion channeling in Si with point defects: the role of lattice relaxation 1-gen-2002 Balboni S. ; Albertazzi E. ; Bianconi M. ; Lulli G.
Channeling energy loss of He2++ in Si by transmission and back-scattering measurements: Experiments and Computer modelling 1-gen-2002 Lulli, G; Albertazzi, E; Bentini, Gg; Bianconi, M; Lotti, R
Charge states distribution of 3350 kev He ions channeled in silicon 1-gen-2002 Bentini, Gg; Albertazzi, E; Bianconi, M; Lotti, R; Lulli, G
The Monte Carlo binary collision approximation applied to the simulation of the ion implantation process in single crystal SiC: high dose effects 1-gen-2001 Lulli, G; Albertazzi, E; Nipoti, R; Bianconi, M; Carnera, A
Determination of He electronic energy loss in Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra 1-gen-2000 G. Lulli; E. Albertazzi; M. Bianconi; G. G. Bentini; R. Nipoti;R. Lotti
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC 1-gen-1999 G. Lulli; E. Albertazzi; M. Bianconi;R. Nipoti