FERRARI, SANDRO
 Distribuzione geografica
Continente #
AS - Asia 193
NA - Nord America 107
SA - Sud America 40
EU - Europa 18
AF - Africa 1
Totale 359
Nazione #
US - Stati Uniti d'America 99
SG - Singapore 89
CN - Cina 44
BR - Brasile 34
HK - Hong Kong 22
KR - Corea 15
IT - Italia 8
NL - Olanda 6
VN - Vietnam 6
CO - Colombia 4
BD - Bangladesh 3
IN - India 3
CA - Canada 2
JP - Giappone 2
MX - Messico 2
UZ - Uzbekistan 2
AR - Argentina 1
DE - Germania 1
DO - Repubblica Dominicana 1
EC - Ecuador 1
FR - Francia 1
HN - Honduras 1
IL - Israele 1
IQ - Iraq 1
JM - Giamaica 1
LT - Lituania 1
MM - Myanmar 1
MY - Malesia 1
PT - Portogallo 1
SA - Arabia Saudita 1
TN - Tunisia 1
TR - Turchia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 359
Città #
Santa Clara 71
Singapore 55
Hong Kong 22
Beijing 20
Seoul 15
Hefei 9
Ashburn 4
San Jose 4
Guangzhou 3
Guastalla 3
Hanoi 3
Ho Chi Minh City 3
Rio de Janeiro 3
Atlanta 2
Belo Horizonte 2
Bogotá 2
Denver 2
Des Moines 2
Mirandola 2
Modena 2
Porto Alegre 2
Recife 2
Ribeirão Preto 2
São Paulo 2
Tashkent 2
Anápolis 1
Atibaia 1
Baghdad 1
Bagé 1
Bellflower 1
Boston 1
Brasília 1
Brembate di Sopra 1
Cabo Frio 1
Campina Grande 1
Canoas 1
Chatham 1
Chicago 1
Cuttack 1
Estância 1
Extrema 1
Glendale 1
Guadalajara 1
Guayaquil 1
Indore 1
Istanbul 1
Itajobi 1
Içara 1
Jeddah 1
Kingston 1
Kuala Lumpur 1
Manizales 1
Martins 1
Mauá 1
Minamishinagawa 1
Monterrey 1
New Delhi 1
Olivos 1
Parnamirim 1
Patrocínio 1
Penedo 1
Pereira 1
Rio Tinto 1
Salto 1
San Juan 1
Santa Luzia 1
Santa Vitória do Palmar 1
Santo André 1
Santo Domingo 1
Sarreguemines 1
Tainan City 1
Taiúva 1
Tokyo 1
Tunis 1
Yangon 1
Totale 289
Nome #
Electron density profile at the interface of SiO2/Si(001) 48
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films 37
Interface engineering for Ge metal-oxide-semiconductor devices 34
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 33
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 30
The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions 28
Diffusion reaction of oxygen in HfO2/SiO2/Si stacks 27
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 26
Ru and RuO2 electrodes for advanced CMOS technology 25
Atomic layer deposited Al2O3 as a capping layer for polymer based transistors 24
Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing 24
Trends of structural and electrical properties in atomic layer deposited HfO2 films 23
Totale 359
Categoria #
all - tutte 1.171
article - articoli 1.171
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.342


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202419 0 0 0 0 0 0 0 0 0 5 14 0
2024/2025183 0 1 18 9 59 12 0 1 0 5 43 35
2025/2026157 8 25 25 25 59 10 5 0 0 0 0 0
Totale 359