FERRARI, SANDRO
 Distribuzione geografica
Continente #
AS - Asia 230
NA - Nord America 128
SA - Sud America 41
EU - Europa 33
AF - Africa 1
Totale 433
Nazione #
US - Stati Uniti d'America 119
SG - Singapore 114
CN - Cina 49
BR - Brasile 35
HK - Hong Kong 23
KR - Corea 16
IT - Italia 12
FR - Francia 11
VN - Vietnam 10
NL - Olanda 6
CO - Colombia 4
IN - India 4
BD - Bangladesh 3
CA - Canada 2
JP - Giappone 2
MX - Messico 2
UZ - Uzbekistan 2
AR - Argentina 1
DE - Germania 1
DO - Repubblica Dominicana 1
EC - Ecuador 1
GR - Grecia 1
HN - Honduras 1
IL - Israele 1
IQ - Iraq 1
JM - Giamaica 1
LT - Lituania 1
MM - Myanmar 1
MQ - Martinica 1
MY - Malesia 1
PT - Portogallo 1
SA - Arabia Saudita 1
TN - Tunisia 1
TR - Turchia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
Totale 433
Città #
Santa Clara 72
Singapore 68
Hong Kong 23
Beijing 20
Seoul 15
Lauterbourg 10
San Jose 10
Ashburn 9
Hefei 9
Hanoi 4
Guangzhou 3
Guastalla 3
Ho Chi Minh City 3
Rio de Janeiro 3
São Paulo 3
Alatri 2
Atlanta 2
Belo Horizonte 2
Bogotá 2
Denver 2
Des Moines 2
Mirandola 2
Modena 2
Newark 2
Oklahoma City 2
Porto Alegre 2
Recife 2
Ribeirão Preto 2
Tashkent 2
Anápolis 1
Athens 1
Atibaia 1
Baghdad 1
Bagé 1
Bellflower 1
Boston 1
Brasília 1
Brembate di Sopra 1
Cabo Frio 1
Campina Grande 1
Canoas 1
Catania 1
Changsha 1
Chatham 1
Chennai 1
Chicago 1
Cuttack 1
Estância 1
Extrema 1
Fort-de-France 1
Glendale 1
Guadalajara 1
Guayaquil 1
Indore 1
Istanbul 1
Itajobi 1
Içara 1
Jeddah 1
Kingston 1
Kuala Lumpur 1
Manizales 1
Martins 1
Mauá 1
Minamishinagawa 1
Monterrey 1
New Delhi 1
Newtown 1
Ninh Bình 1
Olivos 1
Parma 1
Parnamirim 1
Patrocínio 1
Penedo 1
Pereira 1
Phủ Lý 1
Quận Một 1
Rio Tinto 1
Riverside 1
Salto 1
San Juan 1
Santa Luzia 1
Santa Vitória do Palmar 1
Santo André 1
Santo Domingo 1
Sarreguemines 1
Tainan City 1
Taiúva 1
Tokyo 1
Tunis 1
Yangon 1
Totale 344
Nome #
Electron density profile at the interface of SiO2/Si(001) 51
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films 48
Effects of the oxygen precursor on the electrical and structural propertiesof HfO2 films grown by atomic layer deposition on Ge 39
Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy 38
Interface engineering for Ge metal-oxide-semiconductor devices 37
Ru and RuO2 electrodes for advanced CMOS technology 36
The influence of low temperature baking on the properties of SrBi2Ta2O9 films from metallorganic solutions 33
Diffusion reaction of oxygen in HfO2/SiO2/Si stacks 32
Trends of structural and electrical properties in atomic layer deposited HfO2 films 31
Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing 30
Atomic layer deposited Al2O3 as a capping layer for polymer based transistors 29
Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques 29
Totale 433
Categoria #
all - tutte 1.503
article - articoli 1.503
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.006


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/202419 0 0 0 0 0 0 0 0 0 5 14 0
2024/2025183 0 1 18 9 59 12 0 1 0 5 43 35
2025/2026224 8 25 25 25 59 10 37 6 10 7 8 4
2026/20277 7 0 0 0 0 0 0 0 0 0 0 0
Totale 433