FANCIULLI, MARCO
FANCIULLI, MARCO
Istituto per la Microelettronica e Microsistemi - IMM
The 2022 magneto-optics roadmap
2022 Kimel, A.; Zvezdin, A.; Sharma, S.; Shallcross, S.; De Sousa, N.; Garcia-Martin, A.; Salvan, G.; Hamrle, J.; Stejskal, O.; Mccord, J.; Tacchi, S.; Carlotti, G.; Gambardella, P.; Salis, G.; Munzenberg, M.; Schultze, M.; Temnov, V.; Bychkov, I. V.; Kotov, L. N.; Maccaferri, N.; Ignatyeva, D.; Belotelov, V.; Donnelly, C.; Rodriguez, A. H.; Matsuda, I.; Ruchon, T.; Fanciulli, M.; Sacchi, M.; Du, C. R.; Wang, H.; Armitage, N. P.; Schubert, M.; Darakchieva, V.; Liu, B.; Huang, Z.; Ding, B.; Berger, A.; Vavassori, P.
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3
2020 Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing
2020 Longo, EMANUELE MARIA; Wiemer, Claudia; Cecchini, Raimondo; Longo, Massimo; Lamperti, Alessio; Khanas, Anton; Zenkevich, Andrei; Cantoni, Matteo; Rinaldi, Christian; Fanciulli, Marco; Mantovan, Roberto
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface
2020 Belli, M; Fanciulli, M; de Sousa, R
Chemical, structural and magnetic properties of the Fe/Sb2 Te3 interface
2019 Longo, E; Wiemer, C; Cecchini, R; Longo, M; Lamperti, A; Fanciulli, M; Mantovan, R; Longo, E; Fanciulli, M; Khanas, A; Zenkevich, A
In-doped Sb nanowires grown by MOCVD for high speed phase change memories
2019 Cecchini, R; Selmo, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M
4f excitations in Ce Kondo lattices studied by resonant inelastic x-ray scattering
2016 Amorese, A; Dellea, G; Fanciulli, M; Seiro, S; Geibel, C; Krellner, C; Makarova, Ip; Braicovich, L; Ghiringhelli, G; Vyalikh, Dv; Brookes, Nb; Kummer, K
Analog memristive synapse in spiking networks implementing unsupervised learning
2016 Covi E.; Brivio S.; Serb A.; Prodromakis T.; Fanciulli M.; Spiga S.
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si
2016 Vangelista, S.; Lamperti, A.; Wiemer, C.; Fanciulli, M.; Mantovan, R.
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching
2016 Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Sironi, M; Pizio, ; A,
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
2016 Martella, Christian; Melloni, Pierpaolo; Melloni, Pierpaolo; Cinquanta, Eugenio; Cianci, Elena; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Vangelista, Silvia; Fanciulli, Marco; Molle, Alessandro
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
2016 Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, A; Lugstein, A; Longo, M
MOCVD growth and structural characterization of In-Sb-Te nanowires
2016 Selmo, S; Cecchi, S; Cecchini, R; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Longo, M
Thermal resistance measurement of In3SbTe2 nanowires
2016 Battaglia J.L.; Saci A.; De I.; Cecchini R.; Selmo S.; Fanciulli M.; Cecchi S.; Longo M.
(Invited) Defects and Dopants in Silicon and Germanium Nanowires
2015 Fanciulli, Marco; Fanciulli, Marco; Belli, Matteo; Belli, Matteo; Paleari, ; Stefano, ; Lamperti, Alessio; Lamperti, Alessio; Molle, Alessandro; Molle, Alessandro; Sironi, ; Mauro, ; Pizio, ; Antonio,
Analysis of the hyperfine structure in chalcogen-doped silicon and germanium nanowires
2015 Petretto, Guido; Masse', Andrea; Fanciulli, Marco; Debernardi, Alberto
Atomic-scale magnetic properties of truly 3d-diluted ZnO
2015 Mantovan, R; P Gunnlaugsson, H; Johnston, K; Masenda, H; E Mølholt, T; Naidoo, D; Ncube, M; Shayestehaminzadeh, S; Bharuthram, K; Fanciulli, M; P Gislason, H; Langouche, G; Ólafsson, S; C Pereira, L M; Wahl, U; Torelli, P; Weyer, G
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires
2015 Longo, M; Cecchi, S; Selmo, S; Fanciulli, M; Wiemer, C; Battaglia, Jl; Saci, A; Kusiak, A
Silicene field-effect transistors operating at room temperature
2015 Li Tao;Eugenio Cinquanta;Daniele Chiappe;Carlo Grazianetti;Marco Fanciulli;Madan Dubey;Alessandro Molle;Deji Akinwande
Synaptic potentiation and depression in Al:HfO2-based memristor
2015 Covi, E.; Brivio, S.; Fanciulli, M.; Spiga, S.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
The 2022 magneto-optics roadmap | 1-gen-2022 | Kimel, A.; Zvezdin, A.; Sharma, S.; Shallcross, S.; De Sousa, N.; Garcia-Martin, A.; Salvan, G.; Hamrle, J.; Stejskal, O.; Mccord, J.; Tacchi, S.; Carlotti, G.; Gambardella, P.; Salis, G.; Munzenberg, M.; Schultze, M.; Temnov, V.; Bychkov, I. V.; Kotov, L. N.; Maccaferri, N.; Ignatyeva, D.; Belotelov, V.; Donnelly, C.; Rodriguez, A. H.; Matsuda, I.; Ruchon, T.; Fanciulli, M.; Sacchi, M.; Du, C. R.; Wang, H.; Armitage, N. P.; Schubert, M.; Darakchieva, V.; Liu, B.; Huang, Z.; Ding, B.; Berger, A.; Vavassori, P. | |
ALD growth of ultra-thin Co layers on the topological insulator Sb2Te3 | 1-gen-2020 | Longo, Emanuele; Mantovan, Roberto; Cecchini, Raimondo; D Overbeek, Michael; Longo, Massimo; Trevisi, Giovanna; Lazzarini, Laura; Tallarida, Graziella; Fanciulli, Marco; H Winter, Charles; Wiemer, Claudia | |
Fe/Sb(2)Te(3)Interface Reconstruction through Mild Thermal Annealing | 1-gen-2020 | Longo, EMANUELE MARIA; Wiemer, Claudia; Cecchini, Raimondo; Longo, Massimo; Lamperti, Alessio; Khanas, Anton; Zenkevich, Andrei; Cantoni, Matteo; Rinaldi, Christian; Fanciulli, Marco; Mantovan, Roberto | |
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface | 1-gen-2020 | Belli, M; Fanciulli, M; de Sousa, R | |
Chemical, structural and magnetic properties of the Fe/Sb<inf>2</inf>Te<inf>3</inf> interface | 1-gen-2019 | Longo, E; Wiemer, C; Cecchini, R; Longo, M; Lamperti, A; Fanciulli, M; Mantovan, R; Longo, E; Fanciulli, M; Khanas, A; Zenkevich, A | |
In-doped Sb nanowires grown by MOCVD for high speed phase change memories | 1-gen-2019 | Cecchini, R; Selmo, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M | |
4f excitations in Ce Kondo lattices studied by resonant inelastic x-ray scattering | 1-gen-2016 | Amorese, A; Dellea, G; Fanciulli, M; Seiro, S; Geibel, C; Krellner, C; Makarova, Ip; Braicovich, L; Ghiringhelli, G; Vyalikh, Dv; Brookes, Nb; Kummer, K | |
Analog memristive synapse in spiking networks implementing unsupervised learning | 1-gen-2016 | Covi E.; Brivio S.; Serb A.; Prodromakis T.; Fanciulli M.; Spiga S. | |
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si | 1-gen-2016 | Vangelista, S.; Lamperti, A.; Wiemer, C.; Fanciulli, M.; Mantovan, R. | |
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching | 1-gen-2016 | Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Sironi, M; Pizio, ; A, | |
Engineering the Growth of MoS<inf>2</inf> via Atomic Layer Deposition of Molybdenum Oxide Film Precursor | 1-gen-2016 | Martella, Christian; Melloni, Pierpaolo; Melloni, Pierpaolo; Cinquanta, Eugenio; Cianci, Elena; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Vangelista, Silvia; Fanciulli, Marco; Molle, Alessandro | |
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires | 1-gen-2016 | Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, A; Lugstein, A; Longo, M | |
MOCVD growth and structural characterization of In-Sb-Te nanowires | 1-gen-2016 | Selmo, S; Cecchi, S; Cecchini, R; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Longo, M | |
Thermal resistance measurement of In3SbTe2 nanowires | 1-gen-2016 | Battaglia J.L.; Saci A.; De I.; Cecchini R.; Selmo S.; Fanciulli M.; Cecchi S.; Longo M. | |
(Invited) Defects and Dopants in Silicon and Germanium Nanowires | 1-gen-2015 | Fanciulli, Marco; Fanciulli, Marco; Belli, Matteo; Belli, Matteo; Paleari, ; Stefano, ; Lamperti, Alessio; Lamperti, Alessio; Molle, Alessandro; Molle, Alessandro; Sironi, ; Mauro, ; Pizio, ; Antonio, | |
Analysis of the hyperfine structure in chalcogen-doped silicon and germanium nanowires | 1-gen-2015 | Petretto, Guido; Masse', Andrea; Fanciulli, Marco; Debernardi, Alberto | |
Atomic-scale magnetic properties of truly 3d-diluted ZnO | 1-gen-2015 | Mantovan, R; P Gunnlaugsson, H; Johnston, K; Masenda, H; E Mølholt, T; Naidoo, D; Ncube, M; Shayestehaminzadeh, S; Bharuthram, K; Fanciulli, M; P Gislason, H; Langouche, G; Ólafsson, S; C Pereira, L M; Wahl, U; Torelli, P; Weyer, G | |
MOCVD growth and thermal analysis of Sb2Te3 thin films and nanowires | 1-gen-2015 | Longo, M; Cecchi, S; Selmo, S; Fanciulli, M; Wiemer, C; Battaglia, Jl; Saci, A; Kusiak, A | |
Silicene field-effect transistors operating at room temperature | 1-gen-2015 | Li Tao;Eugenio Cinquanta;Daniele Chiappe;Carlo Grazianetti;Marco Fanciulli;Madan Dubey;Alessandro Molle;Deji Akinwande | |
Synaptic potentiation and depression in Al:HfO2-based memristor | 1-gen-2015 | Covi, E.; Brivio, S.; Fanciulli, M.; Spiga, S. |