Hexagonal orthoferrite h-ErFeO3 thin films are synthesized by Atomic Layer Deposition on SiO2(100 nm)/Si substrate, followed by rapid thermal annealing at 650-700 degrees C. Structural, chemical and morphological characterizations of as-deposited and annealed layers are performed by X-ray Reflectivity/Diffraction and Time-of-Flight Secondary Ion-Mass Spectrometry. The formation of the hexagonal phase, which is metastable compared to the more stable orthorhombic ErFeO3, is explained within a simple model considering the different activation energies for the nucleation of hexagonal and orthorhombic phases. The possibility to grow h-ErFeO3 in contact with SiO2/Si by chemical methods opens perspective for the inclusion of new multiferroics in silicon-based devices. (C) 2016 Elsevier B.V. All rights reserved.
Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si
Lamperti A;Wiemer C;Fanciulli M;Mantovan R
2016
Abstract
Hexagonal orthoferrite h-ErFeO3 thin films are synthesized by Atomic Layer Deposition on SiO2(100 nm)/Si substrate, followed by rapid thermal annealing at 650-700 degrees C. Structural, chemical and morphological characterizations of as-deposited and annealed layers are performed by X-ray Reflectivity/Diffraction and Time-of-Flight Secondary Ion-Mass Spectrometry. The formation of the hexagonal phase, which is metastable compared to the more stable orthorhombic ErFeO3, is explained within a simple model considering the different activation energies for the nucleation of hexagonal and orthorhombic phases. The possibility to grow h-ErFeO3 in contact with SiO2/Si by chemical methods opens perspective for the inclusion of new multiferroics in silicon-based devices. (C) 2016 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
