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FRANCIOSI, ALFONSO

FRANCIOSI, ALFONSO  

Istituto Officina dei Materiali - IOM -  

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Risultati 1 - 20 di 68 (tempo di esecuzione: 0.049 secondi).
Titolo Data di pubblicazione Autore(i) File
Ga2Se3Nanowires via Au-Assisted Heterovalent Exchange Reactionon GaAs 1-gen-2020 Berto, Federico; Haghighian, Niloofar; Ferfolja, Katja; Gardonio, Sandra; Fanetti, Mattia; Martelli, Faustino; Mussi, Valentina; G Dubrovskii, Vladimir; V Shtrom, Igor; Franciosi, Alfonso; Rubini, Silvia
Monitoring the Fermi-level position within the bandgap on a single nanowire: A tool for local investigations of doping 1-gen-2013 Fanetti, M.; Ambrosini, S.; Amati, M.; Gregoratti, L.; Abyaneh, M. K.; Franciosi, A.; Chia, A. C. E.; LaPierre, R. R.; Rubini, S.
Stopping and Resuming at Will the Growth of GaAs Nanowires 1-gen-2013 Priante, G.; Ambrosini, S.; Dubrovskii, V. G.; Franciosi, A.; Rubini, S.
Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates 1-gen-2011 Ambrosini, S.; Fanetti, ; Grillo, V.; Franciosi, A.; Rubini, S.
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires 1-gen-2011 S. Ambrosini; M. Fanetti; V. Grillo; A. Franciosi;S. Rubini
Contactless Monitoring of the Diameter-Dependent Conductivity of GaAs Nanowires 1-gen-2010 Jabeen, Fauzia; Rubini, Silvia; Martelli, Faustino; Franciosi, Alfonso; Kolmakov, Andrei; Gregoratti, Luca; Amati, Matteo; Barinov, Alexei; Goldoni, Andrea; Kiskinova, Maya
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 1-gen-2008 Bisognin, G; De Salvador, D; Napolitani, E; Berti, M; Polimeni, A; Capizzi, M; Rubini, S; Martelli, F; Franciosi, A
Structure and growth mechanism of ZnSe nanowires 1-gen-2008 Basu, J; Divakar, R; Nowak, J; Hofmann, S; Colli, A; Franciosi, A; Carter, CB
Formation and dissolution of D-N complexes in dilute nitrides 1-gen-2007 Berti, M; Bisognin, G; De Salvador, D; Napolitani, E; Vangelista, S; Polimeni, A; Capizzi, M; Boscherini, F; Ciatto, G; Rubini, S; Martelli, F; Franciosi, A
GaAs nanowires by Mn-catalysed molecular beam epitaxy 1-gen-2007 Rubini, S; Piccin, M; Bais, G; Jabeen, F; Martelli, F; Franciosi, A
Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires 1-gen-2007 Piccin, M; Bais, G; Grillo, V; Jabeen, F; De Franceschi, S; Carlino, E; Lazzarino, M; Romanato, F; Businaro, L; Rubini, S; Martelli, F; Franciosi, A
Photoluminescence of Mn-catalyzed GaAs nanowires grown by molecular beam epitaxy 1-gen-2007 Martelli, F; Piccin, M; Bais, G; Jabeen, F; Ambrosini, S; Rubini, S; Franciosi, A
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN 1-gen-2007 Geddo, M; Ciabattoni, T; Guizzetti, G; Galli, M; Patrini, M; Polimeni, A; Trotta, R; Capizzi, M; Bais, G; Piccin, M; Rubini, S; Martelli, F; Franciosi, A
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 1-gen-2007 Bisognin, G; De Salvador, D; Napolitani, E; Berti, M; Polimeni, A; Felici, M; Capizzi, M; Bais, G; Jabeen, F; Picein, M; Rubini, S; Martelli, F; Franciosi, A
Catalyst incorporation in nanowires 1-gen-2006 E. Carlino; F. Martelli; S. Rubini; A. Franciosi
Catalyst incorporation in ZnSe nanowires 1-gen-2006 Carlino, E; Martelli, F; Rubini, S; Franciosi, A
Controlling interface reactivity and Schottky barrier height in Au/ZnSe(001) junctions 1-gen-2006 Pelucchi, E; Kumar, D; Lazzarino, M; Rubini, S; Franciosi, A
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain 1-gen-2006 Bisognin, G; De Salvador, D; Drigo, Av; Napolitani, E; Sambo, A; Berti, M; Polimeni, A; Felici, M; Capizzi, M; Gungerich, M; Klar, Pj; Bais, G; Jabeen, F; Piccin, M; Rubini, S; Martelli, F; Franciosi, A
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx 1-gen-2006 Pettinari, G; Masia, F; Polimeni, A; Felici, M; Frova, A; Capizzi, M; Lindsay, A; O'Reilly, EP; Klar, PJ; Stolz, W; Bais, G; Piccin, M; Rubini, S; Martelli, F; Franciosi, A
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx 1-gen-2006 Masia, F; Pettinari, G; Polimeni, A; Felici, M; Miriametro, A; Capizzi, M; Lindsay, A; Healy, Sb; O'Reilly, Ep; Cristofoli, A; Bais, G; Piccin, M; Rubini, S; Martelli, F; Franciosi, A; Klar, Pj; Volz, K; Stolz, W