The electron effective mass, m(e), has been determined by magnetophotoluminescence in as-grown and hydrogenated GaAs1-xNx samples for a wide range of nitrogen concentrations (from x < 0.01% to x=1.78%). A modified k center dot p model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental m(e) values up to x <= 0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.

Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx

Pettinari G;Rubini S;Martelli F;Franciosi A;
2006

Abstract

The electron effective mass, m(e), has been determined by magnetophotoluminescence in as-grown and hydrogenated GaAs1-xNx samples for a wide range of nitrogen concentrations (from x < 0.01% to x=1.78%). A modified k center dot p model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental m(e) values up to x <= 0.6%. Experimental and theoretical evidence is provided for the N complexes responsible for the nonmonotonic and initially puzzling compositional dependence of the electron mass.
2006
INFM
ELECTRON EFFECTIVE-MASS
LOCALIZATION
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/169300
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