BELLI, MATTEO
BELLI, MATTEO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Electron Spin-Lattice Relaxation of Substitutional Nitrogen in Silicon: The Role of Disorder and Motional Effects
2024 Belli, Matteo; Belli, Matteo; Fanciulli, ; Marco,
Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound
2024 Longo, E.; Markou, A.; Felser, C.; Belli, M.; Serafini, A.; Targa, P.; Codegoni, D.; Fanciulli, M.; Mantovan, R.
Surface Defect Engineering in Colored TiO2 Hollow Spheres Toward Efficient Photocatalysis
2023 Liccardo, Letizia; Bordin, Matteo; Sheverdyaeva, Polina; Belli, Matteo; Moras, Paolo; Vomiero, Alberto; Elisa Moretti, And
Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
2021 Longo, Emanuele; Belli, Matteo; Alia, Mario; Rimoldi, Martino; Cecchini, Raimondo; Longo, Massimo; Wiemer, Claudia; Locatelli, Lorenzo; Tsipas, Polychronis; Dimoulas, Athanasios; Gubbiotti, Gianluca; Fanciulli, Marco; Mantovan, Roberto
Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance
2021 Longo, E; Locatelli, L; Belli, M; Alia, M; Kumar, A; Longo, M; Fanciulli, M; Mantovan, R
Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator
2020 Longo, Emanuele; Wiemer, Claudia; Belli, Matteo; Cecchini, Raimondo; Longo, Massimo; Cantoni, Matteo; Rinaldi, Christian; Overbeek, Michael D.; Winter, Charles H.; Gubbiotti, Gianluca; Tallarida, Graziella; Fanciulli, Marco; Mantovan, Roberto
Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface
2020 Belli, M; Fanciulli, M; de Sousa, R
(Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects
2016 Marco Fanciulli; Stefano Paleari; Matteo Belli; Alessio Lamperti
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching
2016 Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Sironi, M; Pizio, ; A,
Silicon nanowires: Donors, surfaces and interface defects
2016 Fanciulli, M; Paleari, S; Belli, M; Lamperti, A
(Invited) Defects and Dopants in Silicon and Germanium Nanowires
2015 Fanciulli, Marco; Fanciulli, Marco; Belli, Matteo; Belli, Matteo; Paleari, ; Stefano, ; Lamperti, Alessio; Lamperti, Alessio; Molle, Alessandro; Molle, Alessandro; Sironi, ; Mauro, ; Pizio, ; Antonio,
Electron spin resonance of substitutional nitrogen in silicon
2014 M. Belli ; M. Fanciulli ; D. Batani ;
Spin-dependent recombination and single charge dynamics in silicon nanostructrures
2014 Rotta, D; Vellei, A; Mazzeo, G; Belli, M; Cocco, S; Tagliaferri, M L V; Crippa, A; Prati, E; Fanciulli, M
Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon
2012 Mazzeo, G; Prati, E; Belli, M; Leti, G; Cocco, S; Fanciulli, M; Guagliardo, F; Ferrari, G
Few electron limit of n-type metal oxide semiconductor single electron transistors
2012 Prati, E; De Michielis, M; Belli, M; Cocco, S; Fanciulli, M; Kotekarpatil, D; Ruoff, M; Kern Dieter, P; Wharam, Da; Verduijn, J; Tettamanzi, Gc; Rogge, S; Roche, B; Wacquez, R; Jehl, X; Vinet, M; Sanquer, M
Adiabatic charge control in a single donor atom transistor
2011 Prati, Enrico; Belli, Matteo; Cocco, Simone; Petretto, Guido; Fanciulli, Marco
Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin
2011 M. Belli; M. Fanciulli; N. V. Abrosimov
Switching quantum transport in a three donors silicon fin-field effect transistor
2011 Guillaume Leti; Enrico Prati; Matteo Belli; Guido Petretto; Marco Fanciulli; Maud Vinet; Romain Wacquez; Marc Sanquer
Measuring the temperature of a mesoscopic electron system by means of single electron statistics
2010 Prati E; Belli M; Fanciulli M; Ferrari G
Compact silicon double and triple dots realized with only two gates
2009 Pierre, M; Wacquez, R; Roche, B; Jehl, X; Sanquer, M; Vinet, M; Prati, E; Belli, M; Fanciulli, M
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Electron Spin-Lattice Relaxation of Substitutional Nitrogen in Silicon: The Role of Disorder and Motional Effects | 1-gen-2024 | Belli, Matteo; Belli, Matteo; Fanciulli, ; Marco, | |
| Giant Spin‐Charge Conversion in Ultrathin Films of the MnPtSb Half‐Heusler Compound | 1-gen-2024 | Longo, E.; Markou, A.; Felser, C.; Belli, M.; Serafini, A.; Targa, P.; Codegoni, D.; Fanciulli, M.; Mantovan, R. | |
| Surface Defect Engineering in Colored TiO2 Hollow Spheres Toward Efficient Photocatalysis | 1-gen-2023 | Liccardo, Letizia; Bordin, Matteo; Sheverdyaeva, Polina; Belli, Matteo; Moras, Paolo; Vomiero, Alberto; Elisa Moretti, And | |
| Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon | 1-gen-2021 | Longo, Emanuele; Belli, Matteo; Alia, Mario; Rimoldi, Martino; Cecchini, Raimondo; Longo, Massimo; Wiemer, Claudia; Locatelli, Lorenzo; Tsipas, Polychronis; Dimoulas, Athanasios; Gubbiotti, Gianluca; Fanciulli, Marco; Mantovan, Roberto | |
| Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance | 1-gen-2021 | Longo, E; Locatelli, L; Belli, M; Alia, M; Kumar, A; Longo, M; Fanciulli, M; Mantovan, R | |
| Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator | 1-gen-2020 | Longo, Emanuele; Wiemer, Claudia; Belli, Matteo; Cecchini, Raimondo; Longo, Massimo; Cantoni, Matteo; Rinaldi, Christian; Overbeek, Michael D.; Winter, Charles H.; Gubbiotti, Gianluca; Tallarida, Graziella; Fanciulli, Marco; Mantovan, Roberto | |
| Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface | 1-gen-2020 | Belli, M; Fanciulli, M; de Sousa, R | |
| (Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects | 1-gen-2016 | Marco Fanciulli; Stefano Paleari; Matteo Belli; Alessio Lamperti | |
| Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching | 1-gen-2016 | Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Sironi, M; Pizio, ; A, | |
| Silicon nanowires: Donors, surfaces and interface defects | 1-gen-2016 | Fanciulli, M; Paleari, S; Belli, M; Lamperti, A | |
| (Invited) Defects and Dopants in Silicon and Germanium Nanowires | 1-gen-2015 | Fanciulli, Marco; Fanciulli, Marco; Belli, Matteo; Belli, Matteo; Paleari, ; Stefano, ; Lamperti, Alessio; Lamperti, Alessio; Molle, Alessandro; Molle, Alessandro; Sironi, ; Mauro, ; Pizio, ; Antonio, | |
| Electron spin resonance of substitutional nitrogen in silicon | 1-gen-2014 | M. Belli ; M. Fanciulli ; D. Batani ; | |
| Spin-dependent recombination and single charge dynamics in silicon nanostructrures | 1-gen-2014 | Rotta, D; Vellei, A; Mazzeo, G; Belli, M; Cocco, S; Tagliaferri, M L V; Crippa, A; Prati, E; Fanciulli, M | |
| Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon | 1-gen-2012 | Mazzeo, G; Prati, E; Belli, M; Leti, G; Cocco, S; Fanciulli, M; Guagliardo, F; Ferrari, G | |
| Few electron limit of n-type metal oxide semiconductor single electron transistors | 1-gen-2012 | Prati, E; De Michielis, M; Belli, M; Cocco, S; Fanciulli, M; Kotekarpatil, D; Ruoff, M; Kern Dieter, P; Wharam, Da; Verduijn, J; Tettamanzi, Gc; Rogge, S; Roche, B; Wacquez, R; Jehl, X; Vinet, M; Sanquer, M | |
| Adiabatic charge control in a single donor atom transistor | 1-gen-2011 | Prati, Enrico; Belli, Matteo; Cocco, Simone; Petretto, Guido; Fanciulli, Marco | |
| Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin | 1-gen-2011 | M. Belli; M. Fanciulli; N. V. Abrosimov | |
| Switching quantum transport in a three donors silicon fin-field effect transistor | 1-gen-2011 | Guillaume Leti; Enrico Prati; Matteo Belli; Guido Petretto; Marco Fanciulli; Maud Vinet; Romain Wacquez; Marc Sanquer | |
| Measuring the temperature of a mesoscopic electron system by means of single electron statistics | 1-gen-2010 | Prati E; Belli M; Fanciulli M; Ferrari G | |
| Compact silicon double and triple dots realized with only two gates | 1-gen-2009 | Pierre, M; Wacquez, R; Roche, B; Jehl, X; Sanquer, M; Vinet, M; Prati, E; Belli, M; Fanciulli, M |