We report on the chemical characterisation of CdZnTe bulk samples by means of secondary ion mass spectrometry (SIMS) and electro-thermal atomic absorption spectrometry (ETAAS). The main background impurities, some of which are identified as cause of performance problems for the opto-electronic devices based on CdTe and HgCdTe technology, have been investigated. Using ETAAS we have measured the absolute bulk concentrations of Mn, Fe and Cu. Moreover, basing on SIMS results we can delineate the behaviour of impurity distributions from surface to bulk.
SIMS-ETAAS characterisation of background impurities in CdZnTe bulk samples
Milella E;
1996
Abstract
We report on the chemical characterisation of CdZnTe bulk samples by means of secondary ion mass spectrometry (SIMS) and electro-thermal atomic absorption spectrometry (ETAAS). The main background impurities, some of which are identified as cause of performance problems for the opto-electronic devices based on CdTe and HgCdTe technology, have been investigated. Using ETAAS we have measured the absolute bulk concentrations of Mn, Fe and Cu. Moreover, basing on SIMS results we can delineate the behaviour of impurity distributions from surface to bulk.File in questo prodotto:
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