A method for the atomic absorption spectrometric determination of important impurities in indium phosphide (InP) is described. Results are compared with those obtained by glow discharge mass spectrometry. To avoid accidental contamination, no preconcentration was used:The detection limits are as low as 10(14)-10(16) atoms cm-3. This method gives the possibility of checking rapidly the amount of impurities in InP polycrystals and dopants in InP single crystals by a relatively inexpensive technique.

DIRECT DETERMINATION OF TRACE-ELEMENTS IN INDIUM-PHOSPHIDE BY ATOMIC-ABSORPTION SPECTROMETRY

MILELLA E;
1993

Abstract

A method for the atomic absorption spectrometric determination of important impurities in indium phosphide (InP) is described. Results are compared with those obtained by glow discharge mass spectrometry. To avoid accidental contamination, no preconcentration was used:The detection limits are as low as 10(14)-10(16) atoms cm-3. This method gives the possibility of checking rapidly the amount of impurities in InP polycrystals and dopants in InP single crystals by a relatively inexpensive technique.
1993
ATOMIC ABSORPTION SPECTROMETRY
INDIUM PHOSPHIDE
SEMICONDUCTORS
TRACE ELEMENTS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/10229
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