In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.

A tight-binding study of LUMO states in ellipsoidal silicon nanocrystals

Cantele G;Ninno D;
2004

Abstract

In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.
2004
Inglese
22
4
808
814
7
http://www.sciencedirect.com/science/article/pii/S138694770300523X
Sì, ma tipo non specificato
NANOSTRUCTURES
LUMINESCENCE
SEMICONDUCTOR QUANTUM DOTS
ELECTRONIC STRUCTURE
POROUS SILICON
1
2
info:eu-repo/semantics/article
262
Trani, F; Cantele, G; Ninno, D; Iadonisi, G
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/11409
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