We report on the structural assessment of metalorganic vapour phase epitaxy grown (100)-oriented CdTe epilayers on both (100)GaAs and (100)ZnTe/GaAs. Ion channelling Rutherford backscattering spectrometry and cathodoluminescence (CL) measurements are used to study the effect of inserting a proper ZnTe buffer layer [G. Leo et al., J. Vac. Sci. and Technol. B 14 (1996) 1739] between CdTe and GaAs. The insertion of a ZnTe buffer layer improves the surface crystalline and optical quality of the CdTe: CL images show that non-radiative recombination regions, associated with extended defects, strongly decrease when a ZnTe buffer layer is used. Also, enhanced excitonic emissions are observed in the case of CdTe/ZnTe/GaAs samples.
Structural study of (100)CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100)GaAs
1997
Abstract
We report on the structural assessment of metalorganic vapour phase epitaxy grown (100)-oriented CdTe epilayers on both (100)GaAs and (100)ZnTe/GaAs. Ion channelling Rutherford backscattering spectrometry and cathodoluminescence (CL) measurements are used to study the effect of inserting a proper ZnTe buffer layer [G. Leo et al., J. Vac. Sci. and Technol. B 14 (1996) 1739] between CdTe and GaAs. The insertion of a ZnTe buffer layer improves the surface crystalline and optical quality of the CdTe: CL images show that non-radiative recombination regions, associated with extended defects, strongly decrease when a ZnTe buffer layer is used. Also, enhanced excitonic emissions are observed in the case of CdTe/ZnTe/GaAs samples.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
