We present a systematic investigation of transient photoluminescence in GaAs V-shaped Quantum Wires as a function of temperature, aimed at the understanding of the radiative recombination mechanism of the ground level (localized vs free exciton recombination). Exciton localization energy, density of localization centres and exciton-intrinsic Lifetime have been determined from the theoretical analysis of the transient photoluminescence spectra.
Free versus localized exciton in GaAs V-shaped quantum wires
Lomascolo M;
1997
Abstract
We present a systematic investigation of transient photoluminescence in GaAs V-shaped Quantum Wires as a function of temperature, aimed at the understanding of the radiative recombination mechanism of the ground level (localized vs free exciton recombination). Exciton localization energy, density of localization centres and exciton-intrinsic Lifetime have been determined from the theoretical analysis of the transient photoluminescence spectra.File in questo prodotto:
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