We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04 Ga0.96 As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111) and (111) fault planes and single Frank stacking faults lying on (111) or (111) fault planes by comparing experimental images with the predictions obtained with the g b = 0 rule as well as with simulated images.
Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers
Heun S;Rubini S;Sorba L;Franciosi A
1997
Abstract
We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04 Ga0.96 As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111) and (111) fault planes and single Frank stacking faults lying on (111) or (111) fault planes by comparing experimental images with the predictions obtained with the g b = 0 rule as well as with simulated images.File in questo prodotto:
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