lectrical characterization of ZnSe-GaAs n-p heterodiodes grown by molecular beam epitaxy under different View the MathML source flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV. Achievement of device-grade heterostructures with engineered offsets is shown under appropriate growth conditions.
Electrical characterization of engineered ZnSe/GaAs heterojunction diodes
Vittorio Pellegrini;Fabio Beltram;Marco Lazzarino;Lucia Sorba;Silvia Rubini;Alfonso Franciosi
1997
Abstract
lectrical characterization of ZnSe-GaAs n-p heterodiodes grown by molecular beam epitaxy under different View the MathML source flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV. Achievement of device-grade heterostructures with engineered offsets is shown under appropriate growth conditions.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
