In this study the analysis of ionic and neutral species produced by the interaction between laser radiation and SnSe and SnTe targets is reported. Time of flight mass spectrometry and emission spectroscopy are used for the characterization of the ablated material. Relations between target and plume composition are discussed in order to improve the understanding of the laser deposition process
Pulsed laser induced ablation applied to epitaxial growth of semiconductor materials: selenides and tellurides plume analysis
1994
Abstract
In this study the analysis of ionic and neutral species produced by the interaction between laser radiation and SnSe and SnTe targets is reported. Time of flight mass spectrometry and emission spectroscopy are used for the characterization of the ablated material. Relations between target and plume composition are discussed in order to improve the understanding of the laser deposition processFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
