High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm(-1) and 35 A cm(-2), respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.
High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
Salhi A;Todaro MT;Passaseo A;De Vittorio M
2007
Abstract
High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm(-1) and 35 A cm(-2), respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.File in questo prodotto:
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