We performed a comparative investigation of interface structure and composition in pseudomorphic ZnSe/GaAs(001) heterostructures grown using interface fabrication procedures that produce epilayers with minimum stacking fault densities (below 104 cm-2). We detected in all cases a 1-nm thick intermixed region at the interface that is depleted of As and is comprised of a (Zn,Ga)As alloy with zincblende structure. No ZnAs formation was found in any of the interfaces examined. Our results imply that Ga-Se reactions at the ZnSe/GaAs interface do not necessarily lead to nucleation of high densities of stacking faults and that ZnAs formation plays no role in the observed reduction of the native defect density.
Local Interface Composition and Native Stacking Fault Density in ZnSe/GaAs(001) Heterostructures
2004-01-01
Abstract
We performed a comparative investigation of interface structure and composition in pseudomorphic ZnSe/GaAs(001) heterostructures grown using interface fabrication procedures that produce epilayers with minimum stacking fault densities (below 104 cm-2). We detected in all cases a 1-nm thick intermixed region at the interface that is depleted of As and is comprised of a (Zn,Ga)As alloy with zincblende structure. No ZnAs formation was found in any of the interfaces examined. Our results imply that Ga-Se reactions at the ZnSe/GaAs interface do not necessarily lead to nucleation of high densities of stacking faults and that ZnAs formation plays no role in the observed reduction of the native defect density.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
