We report the fabrication and characterization of high quality tantalum films as absorbers for STJ radiation detectors. Values of the residual resistance ratio up to 75 and bulk value of the superconducting transition temperature T-c = 4.5 +/- 0.1 K have been achieved. Devices for detection with lateral aluminum superconducting tunnel junctions have been fabricated on such films. The detector response to X-ray is discussed. (C) 2003 Elsevier B.V. All rights reserved.

Progress in fabrication of high quality tantalum film absorber for STJ radiation detector

R Cristiano;
2004

Abstract

We report the fabrication and characterization of high quality tantalum films as absorbers for STJ radiation detectors. Values of the residual resistance ratio up to 75 and bulk value of the superconducting transition temperature T-c = 4.5 +/- 0.1 K have been achieved. Devices for detection with lateral aluminum superconducting tunnel junctions have been fabricated on such films. The detector response to X-ray is discussed. (C) 2003 Elsevier B.V. All rights reserved.
2004
Istituto di Scienze Applicate e Sistemi Intelligenti "Eduardo Caianiello" - ISASI
superconducting tunnel junction detector; epitaxial thin film growing; residual resistance ratio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/118194
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