Thin indium tin oxide (ITO) films have been deposited on Si (100) substrates by laser ablating pure metals in oxygen atmosphere. The ablation has been carried out by a frequency doubled Nd:YAG laser and the oxygen pressure has been varied between 50 and 500 Pa. The substrate temperature has been varied from 25 to 700°C. The gaseous phase has been studied by mass spectrometry and fast ICCD imaging. The deposited films have been analysed by X-ray diffraction, scanning electron microscopy and electric resistance measurements.
Reactive pulsed laser ablation and deposition of thin oxide films for solid state compact sensor
Di Palma T;
1999
Abstract
Thin indium tin oxide (ITO) films have been deposited on Si (100) substrates by laser ablating pure metals in oxygen atmosphere. The ablation has been carried out by a frequency doubled Nd:YAG laser and the oxygen pressure has been varied between 50 and 500 Pa. The substrate temperature has been varied from 25 to 700°C. The gaseous phase has been studied by mass spectrometry and fast ICCD imaging. The deposited films have been analysed by X-ray diffraction, scanning electron microscopy and electric resistance measurements.File in questo prodotto:
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