Aluminium nitride films were synthesized by reaction of laser-evaporated Al in NH3 atmosphere. Optical multichannel emission spectroscopy (OMA) and intensified charge coupled device (ICCD) imaging have been applied to in situ identification of deposition precursors in the plasma plume moving from the target to the substrate. Mass spectrometry has also been used to detect ionic species ejected from an Al target in a mixture with NH3. Thin films prepared by this method were characterized by conventional techniques such as Auger, energy dispersive analysis of X-ray (EDAX), scanning electron microscopy (SEM), and X-ray diffraction. Highly oriented films of AIN (100) on Si (100) were identified.
AlN thin film deposition by pulsed laser ablation of Al in NH3
Di Palma T;S Orlando;
1997
Abstract
Aluminium nitride films were synthesized by reaction of laser-evaporated Al in NH3 atmosphere. Optical multichannel emission spectroscopy (OMA) and intensified charge coupled device (ICCD) imaging have been applied to in situ identification of deposition precursors in the plasma plume moving from the target to the substrate. Mass spectrometry has also been used to detect ionic species ejected from an Al target in a mixture with NH3. Thin films prepared by this method were characterized by conventional techniques such as Auger, energy dispersive analysis of X-ray (EDAX), scanning electron microscopy (SEM), and X-ray diffraction. Highly oriented films of AIN (100) on Si (100) were identified.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
