We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles.
Structural study of the InAs quantum-dot nucleation on GaAs(001)
Placidi E;
2003
Abstract
We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles.File in questo prodotto:
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