Pb1-xSnxTe single crystals have been grown by a vertical Bridgman method. They have typical Hall mobilities and carrier concentration values of 103 cm2/V · s and 1018 cm-3, respectively, and change from p- to n-type as the Sn content increases. The ingots were single crystal with a subgrain structure that has a misorientation no higher than 2?. The segregation of Sn has been determined and it suggests that there is a convective flow in the liquid.
Growth, morphological and structural characterization of Pb1-xSnxTe single crystals
BE Watts;
1991
Abstract
Pb1-xSnxTe single crystals have been grown by a vertical Bridgman method. They have typical Hall mobilities and carrier concentration values of 103 cm2/V · s and 1018 cm-3, respectively, and change from p- to n-type as the Sn content increases. The ingots were single crystal with a subgrain structure that has a misorientation no higher than 2?. The segregation of Sn has been determined and it suggests that there is a convective flow in the liquid.File in questo prodotto:
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