As post-Si era for digital device is incipient, In0.53Ga0.47As is a good candidate among n-type active channels with high electron mobility but - unlike Si - it lacks a well-established technology for dielectric gating which may bear aggressive device scaling. Here we propose a viable route for the atomic layer deposition (ALD) of high-? dielectrics taking advantage from the well-known selfcleaning effect of the trimethylaluminum (TMA) precursor on the III-V compound surfaces. In this respect, the incorporation of Al2O3 cycles both as a pre-conditioning surface treatment and inside the ALD growth of a MO2 host matrix (M=Zr, Hf) is here investigated. Al:MO2/In0.53Ga0.47As heterojunctions have been scrutinized by in situ spectroscopic ellipsometry and ex situ chemical depth-profiling analysis which validate a good physical quality of the oxide and elucidate the effect of the pre-conditioning cycles at the interface level. The resulting MOS capacitors have been characterized by means of multifrequency capacitancevoltage measurements and conductance analysis therein yielding a permittivity of 19±1 both for Al:HfO2 and Al:ZrO2 and similar electrical quality of the interfaces. On the other hand, Al:HfO2 appears to be electrically more robust against leakage and endowed with a lower frequency dispersion in accumulation.
Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates
A Molle;E Cianci;C Wiemer;
2012-01-01
Abstract
As post-Si era for digital device is incipient, In0.53Ga0.47As is a good candidate among n-type active channels with high electron mobility but - unlike Si - it lacks a well-established technology for dielectric gating which may bear aggressive device scaling. Here we propose a viable route for the atomic layer deposition (ALD) of high-? dielectrics taking advantage from the well-known selfcleaning effect of the trimethylaluminum (TMA) precursor on the III-V compound surfaces. In this respect, the incorporation of Al2O3 cycles both as a pre-conditioning surface treatment and inside the ALD growth of a MO2 host matrix (M=Zr, Hf) is here investigated. Al:MO2/In0.53Ga0.47As heterojunctions have been scrutinized by in situ spectroscopic ellipsometry and ex situ chemical depth-profiling analysis which validate a good physical quality of the oxide and elucidate the effect of the pre-conditioning cycles at the interface level. The resulting MOS capacitors have been characterized by means of multifrequency capacitancevoltage measurements and conductance analysis therein yielding a permittivity of 19±1 both for Al:HfO2 and Al:ZrO2 and similar electrical quality of the interfaces. On the other hand, Al:HfO2 appears to be electrically more robust against leakage and endowed with a lower frequency dispersion in accumulation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
