We analyze the performance of holonomic quantum gates in semiconductor quantum dots, driven by ultrafast lasers, under the effect of a dissipative environment. The environment is modeled as a thermal bath of oscillators linearly coupled with the electron states of the quantum dot. Standard techniques make the problem amenable to a numerical treatment and allow one to determine the fidelity as a function of all the relevant physical parameters. As a consequence of our analysis, we show that the disturbance of the environment can be (approximately) suppressed and the performance of the gate optimized-provided that the thermal bath is purely super-Ohmic. We conclude by showing that such an optimization is impossible for Ohmic environments.

Fidelity optimization for holonomic quantum gates in dissipative environments

Sassetti M;
2006

Abstract

We analyze the performance of holonomic quantum gates in semiconductor quantum dots, driven by ultrafast lasers, under the effect of a dissipative environment. The environment is modeled as a thermal bath of oscillators linearly coupled with the electron states of the quantum dot. Standard techniques make the problem amenable to a numerical treatment and allow one to determine the fidelity as a function of all the relevant physical parameters. As a consequence of our analysis, we show that the disturbance of the environment can be (approximately) suppressed and the performance of the gate optimized-provided that the thermal bath is purely super-Ohmic. We conclude by showing that such an optimization is impossible for Ohmic environments.
2006
INFM
Inglese
73
052304
052308
5
Sì, ma tipo non specificato
QUANTUM COMPUTATION. PACS numbers: 03.67.Lx
03.67.Pp
Theoretical work on holonomic quantum gates in semiconductor quantum dots
5
info:eu-repo/semantics/article
262
Parodi, D; Sassetti, M; Solinas, P; Zanardi, P; Zanghi, N
01 Contributo su Rivista::01.01 Articolo in rivista
none
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/120012
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact