X-ray Photoelectron Spectroscopy (XPS) was used to investigate the silicon nitride composition in stacked Si oxide/Si nitride/Si oxide nano-layers. The standard approach for stoichiometry estimation, valid for homogeneous compositions, was corrected for the case of very small thickness and thin overlayer.

XPS composition study of stacked Si oxide/Si nitride/Si oxide nano-layers

C Wiemer
2012

Abstract

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the silicon nitride composition in stacked Si oxide/Si nitride/Si oxide nano-layers. The standard approach for stoichiometry estimation, valid for homogeneous compositions, was corrected for the case of very small thickness and thin overlayer.
2012
Istituto per la Microelettronica e Microsistemi - IMM
XPS; chemical composition; ultra thin layers; crested barriers; Si nitride; cap layer
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/120229
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