The flux parameters employed during molecular beam epitaxy of ZnSe on GaAs control both the heterojunction band alignment and the optical quality of the II-VI wide-gap layer. Independent optimization of the band discontinuities and ZnSe optical properties was achieved by fabricating a 2-nm-thick interface layer in nonstoichiometric conditions to control the band alignment, followed by the optically active layer in near-stoichiometric conditions.
OPTIMIZATION OF INTERFACE PARAMETERS AND BULK PROPERTIES IN ZNSE-GAAS HETEROSTRUCTURES
LOMASCOLO M;PRETE P;
1995
Abstract
The flux parameters employed during molecular beam epitaxy of ZnSe on GaAs control both the heterojunction band alignment and the optical quality of the II-VI wide-gap layer. Independent optimization of the band discontinuities and ZnSe optical properties was achieved by fabricating a 2-nm-thick interface layer in nonstoichiometric conditions to control the band alignment, followed by the optically active layer in near-stoichiometric conditions.File in questo prodotto:
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