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This paper summarizes recent in situ x-ray analyses of the growth of GaAs by organometallic vapor phase epitaxy (OMVPE). This growth was carried out using tertiarybutylarsine (TBAs) and trimethylgallium (TMG) as the source materials. Examples of in situ x-ray measurements are given including x-ray absorption studies of gas phase behavior and x-ray scattering studies of layer-by-layer growth.

INSITU X-RAY STUDIES OF OMVPE GROWTH

Imperatori P;
1992

Abstract

This paper summarizes recent in situ x-ray analyses of the growth of GaAs by organometallic vapor phase epitaxy (OMVPE). This growth was carried out using tertiarybutylarsine (TBAs) and trimethylgallium (TMG) as the source materials. Examples of in situ x-ray measurements are given including x-ray absorption studies of gas phase behavior and x-ray scattering studies of layer-by-layer growth.
1992
Inglese
ADVANCED SEMICONDUCTOR EPITAXIAL GROWTH PROCESSES AND LATERAL AND VERTICAL FABRICATION
CONFERENCE ON ADVANCED SEMICONDUCTOR EPITAXIAL GROWTH PROCESSES AND LATERAL AND VERTICAL FABRICATION
2
9
8
0-8194-0837-9
SPIE-INT SOC OPTICAL ENGINEERING
BELLINGHAM, WA 98227-0010
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
MAR 23-26, 1992
SOMERSET, NJ (USA)
WOS:A1992BX39Q00001
11
none
Fuoss, ; Paul, H; Lamelas, ; Frank, J; Imperatori, P; Kisker, ; David, W; Stephenson, ; G, B; Brennan, ; Sean,
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/120487
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