GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN: H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures. c 2008 American Institute of Physics.
In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN : H heterostructures
Grillo V;Martelli F;Mariucci L
2008
Abstract
GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN: H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures. c 2008 American Institute of Physics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
