Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 °C and annealed at 450 or 600 °C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. The redistribution of the Fe atoms is studied by means of SIMS depth profiling. The electrical properties related to Fe implantation are studied by current-voltage measurements. The results allow a first analysis of the similarities and the differences showed by the Fe implanted GaInP with respect to the InP case.
Incorporation of active Fe impurities in GaInP by High Temperature Ion implantation
2006
Abstract
Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 °C and annealed at 450 or 600 °C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. The redistribution of the Fe atoms is studied by means of SIMS depth profiling. The electrical properties related to Fe implantation are studied by current-voltage measurements. The results allow a first analysis of the similarities and the differences showed by the Fe implanted GaInP with respect to the InP case.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
