The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.
Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells
S Ceccherini;
1998
Abstract
The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga(1-x)A(x)As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements (T-2) Of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with x to a value in good agreement with theoretical predictions for GaAs bulk.File in questo prodotto:
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