Tuning of the emission wavelength in GaAs/AlxGa1-xAs bound-to-continuum quantum cascade lasers with different Al mole fractions (x) is reported. By varying x in the range of 0.37-0.52, a shift of the emission wavelengths of over 4 mu m has been observed. Using this method, laser action in the range of 11.2-15.3 mu m at temperatures T >= 260 K has been demonstrated with a record value of similar to 340 K for GaAs based QCLs operating at 13.5 mu m. (C) 2008 American Institute of Physics.

Wide wavelength tuning of GaAs/AlxGa1-xAs bound-to-continuum quantum cascade lasers by aluminum content control

Vitiello MS;Scamarcio G;
2008

Abstract

Tuning of the emission wavelength in GaAs/AlxGa1-xAs bound-to-continuum quantum cascade lasers with different Al mole fractions (x) is reported. By varying x in the range of 0.37-0.52, a shift of the emission wavelengths of over 4 mu m has been observed. Using this method, laser action in the range of 11.2-15.3 mu m at temperatures T >= 260 K has been demonstrated with a record value of similar to 340 K for GaAs based QCLs operating at 13.5 mu m. (C) 2008 American Institute of Physics.
2008
Istituto di fotonica e nanotecnologie - IFN
INFM
MU-M
TEMPERATURE PERFORMANCE
SEMICONDUCTOR
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/121400
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact