We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K points in the Brillouin zone. In this way, one can go from a compensated semimetal to a semiconductor with a tunable gap. However, the sum rule turns out to be 'protected' against the opening of this semiconducting gap, in contrast to the large variations observed in other systems where the gap is induced by strong correlation effects.
Robustness of the optical conductivity sum rule in bilayer graphene
L Benfatto;
2008
Abstract
We calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K points in the Brillouin zone. In this way, one can go from a compensated semimetal to a semiconductor with a tunable gap. However, the sum rule turns out to be 'protected' against the opening of this semiconducting gap, in contrast to the large variations observed in other systems where the gap is induced by strong correlation effects.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_3307-doc_15895.pdf
solo utenti autorizzati
Descrizione: PRB77_125422.pdf
Tipologia:
Versione Editoriale (PDF)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
146.63 kB
Formato
Adobe PDF
|
146.63 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


