In this study we detected the positive perpendicular strain (E-L) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 x 10(15) Ge/cm(2) at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 degrees C), only 2% of the original epsilon(perpendicular to) survives. This strain completely disappears after 270 min at 405 degrees C. On the other hand, after this more aggressive annealing. a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature. (C) 2008 Elsevier B.V. All rights reserved.
High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
Bruno E
2008
Abstract
In this study we detected the positive perpendicular strain (E-L) due to end of range (EOR) defects formed in Ge amorphized with 300 keV, 2.5 x 10(15) Ge/cm(2) at liquid nitrogen temperature by means of high-resolution X-ray diffraction. We found that, after complete solid phase epitaxial recrystallization of the amorphous layer (about 1 h at 340 degrees C), only 2% of the original epsilon(perpendicular to) survives. This strain completely disappears after 270 min at 405 degrees C. On the other hand, after this more aggressive annealing. a thin negatively strained layer appears just below the surface. The whole set of data is discussed and compared with existing literature. (C) 2008 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
