We propose a model for short-channel organic thin-film transistors, which accounts for Poole-Frenkel field-dependent mobility and space-charge-limited current effects. The model is developed for devices operating in the linear regime, as well as in depletion and saturation regimes. Super linear output curves for low drain voltages, as well as nonsaturating currents, can be adequately described. Experimental results for short-channel P3HT devices have been fitted, showing good agreement with the proposed model.

Modeling of Short-Channel Effects in Organic Thin-Film Transistors

Bonfiglio A;
2008

Abstract

We propose a model for short-channel organic thin-film transistors, which accounts for Poole-Frenkel field-dependent mobility and space-charge-limited current effects. The model is developed for devices operating in the linear regime, as well as in depletion and saturation regimes. Super linear output curves for low drain voltages, as well as nonsaturating currents, can be adequately described. Experimental results for short-channel P3HT devices have been fitted, showing good agreement with the proposed model.
2008
INFM
55
2561
2567
FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
SEXITHIOPHENE
TRANSPORT
MOBILI
1
info:eu-repo/semantics/article
262
Locci, S; Morana, M; Orgiu, E; Bonfiglio, A; Lugli, P
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/121566
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