We suggest a spin filter scheme using T-stub nanometric crossjunctions patterned in two dimensional electron gases (2DEGs) in the presence of spin orbit interaction (SOI). We compare the effects of SOI arising from vertical confinement of charge carriers in the well, Rashba or alpha-SOI, with SOI generated by lateral confinement of the wire, beta-SOI. We show that beta coupling can be more effective in generating a spin polarized current as compared to alpha-SOI. We also compare the efficiency of the T-stub filter with the one of the X shaped cross junction.

Spin filtering through ballistic nanojunctions, the role of geometry and of spin orbit interaction

Carillo F;
2008

Abstract

We suggest a spin filter scheme using T-stub nanometric crossjunctions patterned in two dimensional electron gases (2DEGs) in the presence of spin orbit interaction (SOI). We compare the effects of SOI arising from vertical confinement of charge carriers in the well, Rashba or alpha-SOI, with SOI generated by lateral confinement of the wire, beta-SOI. We show that beta coupling can be more effective in generating a spin polarized current as compared to alpha-SOI. We also compare the efficiency of the T-stub filter with the one of the X shaped cross junction.
2008
INFM
PERIODIC MAGNETIC MODULATIONS
2D ELECTRON-GAS
CONDUCTANCE
INJECTION
TRANSPORT
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/121607
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact