The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron-phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.

Sub-Poissonian phononic population in a nanoelectromechanical system

Cavaliere F;Sassetti M
2008

Abstract

The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron-phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.
2008
INFM
SINGLE-ELECTRON TRANSISTOR
NANOMECHANICAL RESONATOR
SHUTTLE
STATES
NOISE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/121626
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