The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron-phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.

Sub-Poissonian phononic population in a nanoelectromechanical system

Cavaliere F;Sassetti M
2008

Abstract

The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron-phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.
2008
INFM
Inglese
10
023008
023019
12
Sì, ma tipo non specificato
SINGLE-ELECTRON TRANSISTOR
NANOMECHANICAL RESONATOR
SHUTTLE
STATES
NOISE
2
info:eu-repo/semantics/article
262
Merlo, M; Haupt, F; Cavaliere, F; Sassetti, M
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/121626
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