Plasma deposition of a-SiGe, a-SiC and a-SiN alloys starting from fluorinated precursors is overviewed. The growth chemistries are examined on the basis of a unique chemisorption model. Some aspects on the role of F atoms in controlling the gas surface interactions and in determining the material properties are also evidenced.
Plasma deposition of amorphous silicon alloys from fluorinated gases
1996
Abstract
Plasma deposition of a-SiGe, a-SiC and a-SiN alloys starting from fluorinated precursors is overviewed. The growth chemistries are examined on the basis of a unique chemisorption model. Some aspects on the role of F atoms in controlling the gas surface interactions and in determining the material properties are also evidenced.File in questo prodotto:
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