Cross-section TEM analysis was applied to the dice of degraded DH GaAs/GaAlAs oxide-stripe laser diodes to enable a deeper understanding of the origin of chip-related failures in the field operation. The technique enabled the growth of dislocation loops confined inside the active layer to be identified as the failure mechanism responsible for the degradation.
TEM observation of GaAs/GaAlAs laser diodes degraded in field operation
F Corticelli;A Migliori
1991
Abstract
Cross-section TEM analysis was applied to the dice of degraded DH GaAs/GaAlAs oxide-stripe laser diodes to enable a deeper understanding of the origin of chip-related failures in the field operation. The technique enabled the growth of dislocation loops confined inside the active layer to be identified as the failure mechanism responsible for the degradation.File in questo prodotto:
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