A systematic investigation of crack formation has been performed in tensile InxGa1-xAs/InP layers with indium composition ranging from x = 0.2 up to x = 0.35 and thicknesses ranging from 8 nm to 2 mum. It has been found that cracks form after growth and on a characteristic timescale of several days. The formation of cracks has been found to occur in a well defined thickness interval correlated to the residual strain during growth. Crack formation is favored along the [110] in-plane direction in samples with low indium composition. The results can be rationalized within a model which explicitly takes into account the fact that cracks form after growth.
Crack formation in tensile InGaAs/InP layers
Natali M;Lazzarini L;
2000
Abstract
A systematic investigation of crack formation has been performed in tensile InxGa1-xAs/InP layers with indium composition ranging from x = 0.2 up to x = 0.35 and thicknesses ranging from 8 nm to 2 mum. It has been found that cracks form after growth and on a characteristic timescale of several days. The formation of cracks has been found to occur in a well defined thickness interval correlated to the residual strain during growth. Crack formation is favored along the [110] in-plane direction in samples with low indium composition. The results can be rationalized within a model which explicitly takes into account the fact that cracks form after growth.| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_230238-doc_57261.pdf
non disponibili
Descrizione: Crack formation in tensile InGaAs/InP layers
Dimensione
791.95 kB
Formato
Adobe PDF
|
791.95 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
