We have performed a systematic investigation of GaN/AlGaN quantum wells grown on different buffer layers (either GaN or AlGaN) in order to clarify the role of strain, structural parameters, and built-in field in determining the well-width dependence of the ground level emission energy. We find that identical quantum wells grown on different buffer layers exhibit strong variation of the ground level energy but similar well-width dependence. The data are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight binding model. (C) 2000 American Institute of Physics. [S0021-8979(00)09105-2].
Well-width dependence of the ground level emission of GaN/AlGaN quantum wells
Lomascolo M;Della Sala F;
2000
Abstract
We have performed a systematic investigation of GaN/AlGaN quantum wells grown on different buffer layers (either GaN or AlGaN) in order to clarify the role of strain, structural parameters, and built-in field in determining the well-width dependence of the ground level emission energy. We find that identical quantum wells grown on different buffer layers exhibit strong variation of the ground level energy but similar well-width dependence. The data are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight binding model. (C) 2000 American Institute of Physics. [S0021-8979(00)09105-2].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
