The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

nfluence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

Lomascolo M;
2000

Abstract

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.
2000
Inglese
Symposium on GaN and Related Alloys Held at the MRS Fall Meeting
5
art. no.-W12.6
Sì, ma tipo non specificato
NOV 29-DEC 03, 1999
BOSTON, MASSACHUSETTS
9
none
Bonfiglio, A; Lomascolo, M; Traetta, G; Cingolani, R; Di Carlo, A; Della Sala, F; Lugli, P; Botchkarev, A; Morkoc, H
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/122186
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