We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field.

Mesoscopic capacitor effect in GaN/AlGaN quantum wells

Lomascolo M;Passaseo A;
2000

Abstract

We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field.
2000
Istituto di Nanotecnologia - NANOTEC
4-900526-13-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/122212
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