We have used transmission electron microscopy in the high resolution and the dark field modes as well as atomic force microscopy to compare quantum wire structures grown by organometallic chemical vapour deposition at different pressures. The interfaces are more abrupt and develop better defined facets when growing at low pressure than at intermediate and atmospheric pressure. Growth at low pressure therefore has a potential for fabrication of smaller structures with less size variations than the conventional atmospheric pressure growth.
Microscopy Characterization of Quantum Wires Grown on Grooved Substrates
G Biasiol;
1995
Abstract
We have used transmission electron microscopy in the high resolution and the dark field modes as well as atomic force microscopy to compare quantum wire structures grown by organometallic chemical vapour deposition at different pressures. The interfaces are more abrupt and develop better defined facets when growing at low pressure than at intermediate and atmospheric pressure. Growth at low pressure therefore has a potential for fabrication of smaller structures with less size variations than the conventional atmospheric pressure growth.File in questo prodotto:
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