Synchrotron-radiation photoemission studies of heterovalent heterojunctions involving Ge and Cd1-xMnxTe alloys (x = 0, 0.35, and 0.60) were performed on interfaces prepared in situ by Ge deposition on cleaved (I 10) semimagnetic semiconductor surfaces. The valence-band offsets DELTAE(v) were obtained with consistent results through a nonlinear least-squares fit of the interface valence-band emission terms of a superposition of valence-band spectra for the individual semiconductors, and with a more conventional method utilizing the Te 4d and Ge 3d core-level emission. We find valence-band offsets DELTAE(c) = 0.80-0.83 eV largely independent of semimagnetic composition and band gap. In the framework of the linear models of semiconductor heterojunction behavior, this result would indicate that CdTe-Cd1-xMnxTe heterojunctions will follow the common anion rule.
Nonmagnetic/semimagnetic Semiconductor Heterostructures: Ge/Cd1-xMnxTe(110)
G Biasiol;
1993
Abstract
Synchrotron-radiation photoemission studies of heterovalent heterojunctions involving Ge and Cd1-xMnxTe alloys (x = 0, 0.35, and 0.60) were performed on interfaces prepared in situ by Ge deposition on cleaved (I 10) semimagnetic semiconductor surfaces. The valence-band offsets DELTAE(v) were obtained with consistent results through a nonlinear least-squares fit of the interface valence-band emission terms of a superposition of valence-band spectra for the individual semiconductors, and with a more conventional method utilizing the Te 4d and Ge 3d core-level emission. We find valence-band offsets DELTAE(c) = 0.80-0.83 eV largely independent of semimagnetic composition and band gap. In the framework of the linear models of semiconductor heterojunction behavior, this result would indicate that CdTe-Cd1-xMnxTe heterojunctions will follow the common anion rule.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
