A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field(1-7). Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental(8) and theoretical(9-16) investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behaviour with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB-stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.

Observation of an electrically tunable band gap in trilayer graphene

Emmanuele Cappelluti;
2011

Abstract

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field(1-7). Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental(8) and theoretical(9-16) investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behaviour with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB-stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.
2011
Istituto dei Sistemi Complessi - ISC
FEW-LAYER GRAPHENE
ELECTRONIC-STRUCTURE
BILAYER GRAPHENE
FIELD
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/12264
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 474
  • ???jsp.display-item.citation.isi??? 444
social impact